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首頁 > Infineon Technologies代理商 > IPB65R125CFD7ATMA1
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IPB65R125CFD7ATMA1

型號描述:
N-Channel 650 V 19A (Tc) 98W (Tc) Surface Mount PG-TO263-3
HIGH POWER_NEW
型號:
IPB65R125CFD7ATMA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
1000+NT$51.8067
起訂量:1000 倍增量:1
價格: NT$51.8067 數量:

合計: NT$51807

Packaging
Tape & Reel (TR)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Rds On (Max) @ Id, Vgs
125mOhm @ 8.5A, 10V
FET Feature
-
Power Dissipation (Max)
98W (Tc)
Vgs(th) (Max) @ Id
4.5V @ 420µA
Supplier Device Package
PG-TO263-3
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
650 V
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1694 pF @ 400 V
Qualification
-
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