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首頁 > Infineon Technologies代理商 > IPB65R095C7ATMA2
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IPB65R095C7ATMA2

型號描述:
MOSFET HIGH POWER_NEW
型號:
IPB65R095C7ATMA2
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
1000
1+NT$163.8784
10+NT$121.9176
100+NT$89.8688
500+NT$86.8952
1000+NT$74.0096
起訂量:1 倍增量:1
價格: NT$163.8784 數量:

合計: NT$164

Packaging
Tape & Reel (TR)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
24A (Tc)
Rds On (Max) @ Id, Vgs
95mOhm @ 11.8A, 10V
FET Feature
-
Power Dissipation (Max)
128W (Tc)
Vgs(th) (Max) @ Id
4V @ 590µA
Supplier Device Package
PG-TO263-3
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
650 V
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2140 pF @ 400 V
Qualification
-
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