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首頁 > Infineon Technologies代理商 > IPB65R190CFDATMA2
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IPB65R190CFDATMA2

型號描述:
MOSFET HIGH POWER_LEGACY
型號:
IPB65R190CFDATMA2
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
1000
1+NT$120.9264
10+NT$79.296
100+NT$55.5072
500+NT$48.5688
1000+NT$41.6304
2000+NT$39.3176
起訂量:1 倍增量:1
價格: NT$120.9264 數量:

合計: NT$121

Packaging
Tape & Reel (TR)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
17.5A (Tc)
Rds On (Max) @ Id, Vgs
190mOhm @ 7.3A, 10V
FET Feature
-
Power Dissipation (Max)
151W (Tc)
Vgs(th) (Max) @ Id
4.5V @ 700µA
Supplier Device Package
PG-TO263-3
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
650 V
Gate Charge (Qg) (Max) @ Vgs
68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1850 pF @ 100 V
Qualification
-
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