我的購物車 0
購物車中還沒有商品,趕快選購吧!
首頁 > Infineon Technologies代理商 > IPB65R110CFD7ATMA1
影像僅供參考,以產品規格為準

IPB65R110CFD7ATMA1

型號描述:
MOSFET HIGH POWER_NEW
型號:
IPB65R110CFD7ATMA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
1000
1+NT$153.636
10+NT$102.424
100+NT$72.688
500+NT$68.0624
1000+NT$56.4984
起訂量:1 倍增量:1
價格: NT$153.636 數量:

合計: NT$154

Packaging
Tape & Reel (TR)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
22A (Tc)
Rds On (Max) @ Id, Vgs
110mOhm @ 9.7A, 10V
FET Feature
-
Power Dissipation (Max)
114W (Tc)
Vgs(th) (Max) @ Id
4.5V @ 480µA
Supplier Device Package
PG-TO263-3
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
650 V
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1942 pF @ 400 V
Qualification
-
  • 資訊中心