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首頁 > Infineon Technologies代理商 > IPB029N06N3GATMA1
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IPB029N06N3GATMA1

型號描述:
N-Channel 60 V 120A (Tc) 188W (Tc) Surface Mount PG-TO263-3
MOSFET N-CH 60V 120A D2PAK
型號:
IPB029N06N3GATMA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
1+NT$83.2608
10+NT$59.3068
100+NT$41.789
500+NT$35.3759
起訂量:1 倍增量:1
價格: NT$83.2608 數量:

合計: NT$83

Packaging
Tape & Reel (TR)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
2.9mOhm @ 100A, 10V
FET Feature
-
Power Dissipation (Max)
188W (Tc)
Vgs(th) (Max) @ Id
4V @ 118µA
Supplier Device Package
PG-TO263-3
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
60 V
Gate Charge (Qg) (Max) @ Vgs
165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
13000 pF @ 30 V
Qualification
-
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