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首頁 > Infineon Technologies代理商 > IPB027N10N5ATMA1
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IPB027N10N5ATMA1

型號描述:
N-Channel 100 V 120A (Tc) 250W (Tc) Surface Mount PG-TO263-3
MOSFET N-CH 100V 120A D2PAK
型號:
IPB027N10N5ATMA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
1+NT$124.5608
10+NT$94.6926
100+NT$79.6198
起訂量:1 倍增量:1
價格: NT$124.5608 數量:

合計: NT$125

Packaging
Tape & Reel (TR)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
2.7mOhm @ 100A, 10V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Vgs(th) (Max) @ Id
3.8V @ 184µA
Supplier Device Package
PG-TO263-3
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
100 V
Gate Charge (Qg) (Max) @ Vgs
139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
10300 pF @ 50 V
Qualification
-
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