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首頁 > Infineon Technologies代理商 > IPB025N08N3GATMA1
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IPB025N08N3GATMA1

型號描述:
N-Channel 80 V 120A (Tc) 300W (Tc) Surface Mount PG-TO263-3
MOSFET N-CH 80V 120A D2PAK
型號:
IPB025N08N3GATMA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
1000+NT$68.5415
起訂量:1000 倍增量:1
價格: NT$68.5415 數量:

合計: NT$68542

Packaging
Tape & Reel (TR)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
2.5mOhm @ 100A, 10V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Vgs(th) (Max) @ Id
3.5V @ 270µA
Supplier Device Package
PG-TO263-3
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
80 V
Gate Charge (Qg) (Max) @ Vgs
206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
14200 pF @ 40 V
Qualification
-
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