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首頁 > Vishay Siliconix代理商 > SISS98DN-T1-GE3
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SISS98DN-T1-GE3

型號描述:
N-Channel 200 V 14.1A (Tc) 57W (Tc) Surface Mount PowerPAK? 1212-8S
MOSFET N-CH 200V 14.1A PPAK
型號:
SISS98DN-T1-GE3
品牌:
Vishay Siliconix
交期:
5-8工作天
原廠包裝量:
1+NT$60.931
10+NT$38.578
50+NT$28.886
100+NT$25.754
500+NT$20.257
起訂量:1 倍增量:1
價格: NT$60.931 數量:

合計: NT$61

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
14.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
105mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 7.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
608 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
57W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8S
Package / Case
PowerPAK® 1212-8S
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