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首頁 > Vishay Semiconductors代理商 > SIS407ADN-T1-GE3
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SIS407ADN-T1-GE3

型號描述:
P-Channel 20 V 18A (Tc) 3.7W (Ta), 39.1W (Tc) Surface Mount PowerPAK? 1212-8
MOSFET -20V Vds 8V Vgs PowerPAK 1212-8
型號:
SIS407ADN-T1-GE3
品牌:
Vishay Semiconductors
交期:
5-8工作天
原廠包裝量:
3000
起訂量:1 倍增量:1
價格: NT$0 數量:

合計: NT$0

FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
9mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
168 nC @ 8 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
5875 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3.7W (Ta), 39.1W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
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