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首頁 > Vishay Siliconix代理商 > SISS92DN-T1-GE3
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SISS92DN-T1-GE3

型號描述:
N-Channel 250 V 3.4A (Ta), 12.3A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK? 1212-8S
MOSFET N-CH 250V 3.4A/12.3A PPAK
型號:
SISS92DN-T1-GE3
品牌:
Vishay Siliconix
交期:
5-8工作天
原廠包裝量:
1+NT$65.89
10+NT$41.731
50+NT$31.337
100+NT$27.975
500+NT$22.077
起訂量:1 倍增量:1
價格: NT$65.89 數量:

合計: NT$66

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
3.4A (Ta), 12.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
173mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 125 V
FET Feature
-
Power Dissipation (Max)
5.1W (Ta), 65.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8S
Package / Case
PowerPAK® 1212-8S
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