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首頁 > Vishay Siliconix代理商 > SISS65DN-T1-GE3
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SISS65DN-T1-GE3

型號描述:
P-Channel 30 V 25.9A (Ta), 94A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK? 1212-8S
MOSFET P-CH 30V 25.9A/94A PPAK
型號:
SISS65DN-T1-GE3
品牌:
Vishay Siliconix
交期:
5-8工作天
原廠包裝量:
1+NT$59.16
10+NT$37.444
100+NT$24.96
500+NT$19.606
1000+NT$17.883
起訂量:1 倍增量:1
價格: NT$59.16 數量:

合計: NT$59

FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
25.9A (Ta), 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
138 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4930 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
5.1W (Ta), 65.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8S
Package / Case
PowerPAK® 1212-8S
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