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SIS606BDN-T1-GE3

型號描述:
N-Channel 100 V 9.4A (Ta), 35.3A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK? 1212-8
型號:
SIS606BDN-T1-GE3
品牌:
Vishay Intertechnologies
交期:
7-10工作天
原廠包裝量:
3000
3000+NT$32.2052
6000+NT$30.6121
起訂量:3000 倍增量:1
價格: NT$32.2052 數量:

合計: NT$96616

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
9.4A (Ta), 35.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
17.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1470 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3.7W (Ta), 52W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
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