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TK12Q60W,S1VQ

型號描述:
N-Channel 600 V 11.5A (Ta) 100W (Tc) Through Hole IPAK
MOSFET N CH 600V 11.5A IPAK
型號:
TK12Q60W,S1VQ
品牌:
Toshiba Semiconductor and Storage
交期:
5-8工作天
原廠包裝量:
1+NT$123.965
75+NT$58.376
150+NT$52.944
525+NT$45.219
1050+NT$41.876
2025+NT$39.202
5025+NT$36.452
起訂量:1 倍增量:1
價格: NT$123.965 數量:

合計: NT$124

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
340mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id
3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
890 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Stub Leads, IPAK
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