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首頁 > Toshiba代理商 > TK190E65Z,S1X
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TK190E65Z,S1X

型號描述:
MOSFET 650V DTMOS VI TO-220 190mohm
型號:
TK190E65Z,S1X
品牌:
Toshiba
交期:
5-8工作天
原廠包裝量:
50
1+NT$196.403
10+NT$102.502
100+NT$98.202
500+NT$77.056
1000+NT$67.738
起訂量:1 倍增量:1
價格: NT$196.403 數量:

合計: NT$196

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
15A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
4V @ 610µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1370 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
130W (Tc)
Operating Temperature
150°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
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