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TP65H150G4LSG-TR

型號描述:
N-Channel 650 V 13A (Tc) 52W (Tc) Surface Mount 3-PQFN (8x8)
650 V 13 A GAN FET
型號:
TP65H150G4LSG-TR
品牌:
Renesas Electronics Corporation
交期:
5-8工作天
原廠包裝量:
1+NT$200.173
10+NT$133.906
100+NT$96.32
500+NT$94.559
起訂量:1 倍增量:1
價格: NT$200.173 數量:

合計: NT$200

FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id
4.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
598 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
52W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
3-PQFN (8x8)
Package / Case
3-PowerTDFN
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