TP65H035G4YS
- 型號描述:
-
N-Channel 650 V 46.5A (Tc) 156W (Tc) Through Hole TO-247-4L
650V, 35MOHM GAN FET IN TO247-4L
- 型號:
- TP65H035G4YS
- 品牌:
- Renesas Electronics Corporation
- 交期:
- 5-8工作天
- 原廠包裝量:
- 1200
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 650 V
- Current - Continuous Drain (Id) @ 25°C
- 46.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Max) @ Id, Vgs
- 41mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id
- 3.9V @ 4.3mA
- Gate Charge (Qg) (Max) @ Vgs
- 42.7 nC @ 10 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 2680 pF @ 400 V
- FET Feature
- -
- Power Dissipation (Max)
- 156W (Tc)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Grade
- -
- Qualification
- -
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-247-4L
- Package / Case
- TO-247-4
- 精選品牌
- 熱銷產品
- PZS51A5V1CS_R1_00001
- LTC7891RUFDM#PBF
- 323161
- M24308/3-2F
- R5F513T3AGNH#20
- LTC6255HS6#TRMPBF
- ADN4624BRNZ
- LT3029EMSE#TRPBF
- 30DRPS4E(D)
- 30DRPS4E
- DF63W-2EP-3.96C
- PJW8N03_R2_00001
- W25Q32JVSSIM
- WIG-16300
- M6-21-427
- 10169891-453001SLF
- AFB0924SH-AF00
- MS27473T12F98PA
- ASL5115SHNZ
- 4922R-08L
- RJFC2ZN
- HCPL-4502-500E
- EEU-FS1A821B
- CRCW1210105RFKEA
- LQM21PN2R2MGSD
- 1SMB3EZ24_R1_00001
- DN01508D
- RC0805FR-0726K7L
- DAR71210
- DAR71210
- DAR71210
- DAR71210
- FDA117GRTR
- MP1653AGTF-Z
- DUA55CM44
- RT6263BHGJ8F
- SD24C-7
- RC0402FR-0736K5P
- 431256083726
- RG2012P-101-B-T5
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