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TP65H030G4PRS-TR

型號描述:
N-Channel 650 V 55.7A (Tc) 192W (Tc) Surface Mount TOLT
GANFET N-CH 650V 55.7A TOLT
型號:
TP65H030G4PRS-TR
品牌:
Renesas Electronics Corporation
交期:
5-8工作天
原廠包裝量:
1300+NT$157.083
起訂量:1300 倍增量:1
價格: NT$157.083 數量:

合計: NT$204208

FET Type
N-Channel
Technology
GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
55.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V
Rds On (Max) @ Id, Vgs
41mOhm @ 30A, 12V
Vgs(th) (Max) @ Id
4.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
24.5 nC @ 12 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
192W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
TOLT
Package / Case
16-PowerSOP Module
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