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TP65H015G5WS

型號描述:
N-Channel 650 V 93A (Tc) 266W (Tc) Through Hole TO-247-3
650 V 95 A GAN FET
型號:
TP65H015G5WS
品牌:
Renesas Electronics Corporation
交期:
5-8工作天
原廠包裝量:
1+NT$757.773
30+NT$480.347
120+NT$439.917
起訂量:1 倍增量:1
價格: NT$757.773 數量:

合計: NT$758

FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
93A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
18mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
4.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5218 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
266W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
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