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首頁 > Infineon Technologies代理商 > IMZA120R020M1HXKSA1
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IMZA120R020M1HXKSA1

型號描述:
N-Channel 1200 V 98A (Tc) 375W (Tc) Through Hole PG-TO247-4-8
SIC DISCRETE
型號:
IMZA120R020M1HXKSA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
1+NT$792.108
30+NT$501.096
120+NT$437.431
510+NT$427.046
起訂量:1 倍增量:1
價格: NT$792.108 數量:

合計: NT$792

FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
98A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
26.9mOhm @ 41A, 18V
Vgs(th) (Max) @ Id
5.2V @ 17.6mA
Gate Charge (Qg) (Max) @ Vgs
109 nC @ 18 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
3460 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
375W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4-8
Package / Case
TO-247-4
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