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首頁 > Diodes Incorporated代理商 > DMTH10H4M5LPSWQ-13
影像僅供參考,以產品規格為準

DMTH10H4M5LPSWQ-13

型號描述:
N-Channel 100 V 20A (Ta), 107A (Tc) 4.7W (Ta), 136W (Tc) Surface Mount, Wettable Flank PowerDI5060-8 (Type UX)
MOSFET BVDSS: 61V~100V POWERDI50
型號:
DMTH10H4M5LPSWQ-13
品牌:
Diodes Incorporated
交期:
5-8工作天
原廠包裝量:
1+NT$99.6158
10+NT$64.5028
100+NT$44.4882
500+NT$36.7728
起訂量:1 倍增量:1
價格: NT$99.6158 數量:

合計: NT$100

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
20A (Ta), 107A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4843 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
4.7W (Ta), 136W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount, Wettable Flank
Supplier Device Package
PowerDI5060-8 (Type UX)
Package / Case
8-PowerTDFN
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