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首頁 > Diodes Incorporated代理商 > DMT10H015LPSW-13
影像僅供參考,以產品規格為準

DMT10H015LPSW-13

型號描述:
N-Channel 100 V 10A (Ta), 44A (Tc) 2.4W (Ta), 46W (Tc) Surface Mount, Wettable Flank PowerDI5060-8 (Type UX)
MOSFET MOSFET BVDSS: 61V-100V PowerDI5060-8/SWP T&R 2.5K
型號:
DMT10H015LPSW-13
品牌:
Diodes Incorporated
交期:
5-8工作天
原廠包裝量:
2500
2500+NT$12.9219
5000+NT$12.1874
10000+NT$11.8201
起訂量:2500 倍增量:2500
價格: NT$12.9219 數量:

合計: NT$32305

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
10A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
16mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
33.3 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1871 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
2.4W (Ta), 46W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount, Wettable Flank
Supplier Device Package
PowerDI5060-8 (Type UX)
Package / Case
8-PowerTDFN
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