我的購物車 0
購物車中還沒有商品,趕快選購吧!
影像僅供參考,以產品規格為準

DMT6007LFG-13

型號描述:
MOSFET 60V N-Ch Enh FET 20Vgss 80A 62.5W
型號:
DMT6007LFG-13
品牌:
Diodes Incorporated
交期:
5-8工作天
原廠包裝量:
3000
1+NT$53.7579
10+NT$34.0578
100+NT$22.7052
500+NT$17.8637
1000+NT$16.3277
3000+NT$14.8252
起訂量:1 倍增量:1
價格: NT$53.7579 數量:

合計: NT$54

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
15A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
41.3 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2090 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
2.2W (Ta), 62.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
POWERDI3333-8
Package / Case
8-PowerVDFN
  • 資訊中心