我的購物車 0
購物車中還沒有商品,趕快選購吧!
首頁 > Diodes Incorporated代理商 > DMT15H017LPSW-13
影像僅供參考,以產品規格為準

DMT15H017LPSW-13

型號描述:
N-Channel 150 V 9.4A (Ta), 58A (Tc) 1.3W (Ta), 89W (Tc) Surface Mount, Wettable Flank PowerDI5060-8 (Type UX)
MOSFET MOSFET BVDSS: 101V-250V PowerDI5060-8 T&R 2.5K
型號:
DMT15H017LPSW-13
品牌:
Diodes Incorporated
交期:
5-8工作天
原廠包裝量:
2500
2500+NT$28.4483
起訂量:2500 倍增量:2500
價格: NT$28.4483 數量:

合計: NT$71121

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
9.4A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
17.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3369 pF @ 75 V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta), 89W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount, Wettable Flank
Supplier Device Package
PowerDI5060-8 (Type UX)
Package / Case
8-PowerTDFN
  • 資訊中心