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首頁 > Diodes Incorporated代理商 > DMT10H052LFDF-7
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DMT10H052LFDF-7

型號描述:
N-Channel 100 V 5A (Ta) 800mW (Ta) Surface Mount U-DFN2020-6 (Type F)
MOSFET MOSFET BVDSS: 61V~100V U-DFN2020-6 T&R 3K
型號:
DMT10H052LFDF-7
品牌:
Diodes Incorporated
交期:
5-8工作天
原廠包裝量:
3000
1+NT$19.3944
10+NT$14.4929
100+NT$10.8256
500+NT$8.4983
1000+NT$6.5588
3000+NT$5.8183
6000+NT$5.501
9000+NT$5.2894
起訂量:1 倍增量:1
價格: NT$19.3944 數量:

合計: NT$19

Packaging
Tape & Reel (TR)
Package / Case
6-UDFN Exposed Pad
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
5A (Ta)
Rds On (Max) @ Id, Vgs
52mOhm @ 4A, 10V
FET Feature
-
Power Dissipation (Max)
800mW (Ta)
Vgs(th) (Max) @ Id
3V @ 250µA
Supplier Device Package
U-DFN2020-6 (Type F)
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
100 V
Gate Charge (Qg) (Max) @ Vgs
5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
258 pF @ 50 V
Qualification
-
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