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首頁 > Diodes Incorporated代理商 > DMT10H015LSS-13
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DMT10H015LSS-13

型號描述:
MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W
型號:
DMT10H015LSS-13
品牌:
Diodes Incorporated
交期:
5-8工作天
原廠包裝量:
2500
1+NT$37.768
10+NT$22.522
25+NT$22.419
100+NT$16.771
250+NT$16.667
500+NT$14.588
1000+NT$14.553
2500+NT$14.553
5000+NT$14.103
起訂量:1 倍增量:1
價格: NT$37.768 數量:

合計: NT$38

Packaging
Tape & Reel (TR)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
8.3A (Ta)
Rds On (Max) @ Id, Vgs
16mOhm @ 20A, 10V
FET Feature
-
Power Dissipation (Max)
1.2W (Ta)
Vgs(th) (Max) @ Id
3.5V @ 250µA
Supplier Device Package
8-SO
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
100 V
Gate Charge (Qg) (Max) @ Vgs
33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1871 pF @ 50 V
Qualification
-
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