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DMT10H010LCT

型號描述:
N-Channel 100 V 98A (Tc) 2W (Ta), 139W (Tc) Through Hole TO-220-3
MOSFET 100V N-Ch Enh FET 9.5mOHm 10V 98A
型號:
DMT10H010LCT
品牌:
Diodes Incorporated
交期:
5-8工作天
原廠包裝量:
50
起訂量:1 倍增量:1
價格: NT$0 數量:

合計: NT$0

Packaging
Tube
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
98A (Tc)
Rds On (Max) @ Id, Vgs
9.5mOhm @ 13A, 10V
FET Feature
-
Power Dissipation (Max)
2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id
3V @ 250µA
Supplier Device Package
TO-220-3
Grade
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
100 V
Gate Charge (Qg) (Max) @ Vgs
71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 50 V
Qualification
-
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