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首頁 > DIODES INC.代理商 > DMT10H9M9SCT
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DMT10H9M9SCT

型號描述:
N-Channel 100 V 99A (Tc) 2.3W (Ta), 156W (Tc) Through Hole TO-220-3
型號:
DMT10H9M9SCT
品牌:
DIODES INC.
交期:
7-12工作天
原廠包裝量:
1
1+NT$134.235
10+NT$52.812
100+NT$44.01
500+NT$40.466
1000+NT$36.18
5000+NT$31.893
起訂量:1 倍增量:1
價格: NT$134.235 數量:

合計: NT$134

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
99A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
8.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2085 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
2.3W (Ta), 156W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
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