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SIR418DP-T1-GE3
影像僅供參考,以產品規格為準

SIR418DP-T1-GE3

型號描述:
MOSFET 40V Vds 20V Vgs PowerPAK SO-8
型號:
SIR418DP-T1-GE3
品牌:
Vishay Semiconductors
交期:
5-8工作天
原廠包裝量:
3000
1+¥11.34
10+¥10.164
100+¥7.9128
500+¥6.5352
1000+¥5.166
3000+¥4.8216
起訂量:1倍增量:1
價格:¥11.34數量:

合計:¥11.34

Input Capacitance (Ciss) (Max) @ Vds
2410 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs
75 nC @ 10 V
Drain to Source Voltage (Vdss)
40 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Supplier Device Package
PowerPAK® SO-8
Vgs(th) (Max) @ Id
2.4V @ 250µA
Power Dissipation (Max)
39W (Tc)
FET Feature
-
Rds On (Max) @ Id, Vgs
5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Packaging
Tape & Reel (TR)
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