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SIR618DP-T1-GE3
影像僅供參考,以產品規格為準

SIR618DP-T1-GE3

型號描述:
MOSFET 200V Vds 20V Vgs PowerPAK SO-8
型號:
SIR618DP-T1-GE3
品牌:
Vishay Semiconductors
交期:
5-8工作天
原廠包裝量:
3000
起訂量:1倍增量:1
價格:NT$0數量:

合計:NT$0

Packaging
Tape & Reel (TR)
Package / Case
PowerPAK® SO-8
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
14.2A (Tc)
Rds On (Max) @ Id, Vgs
95mOhm @ 8A, 10V
FET Feature
-
Power Dissipation (Max)
48W (Tc)
Vgs(th) (Max) @ Id
4V @ 250µA
Supplier Device Package
PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
200 V
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds
740 pF @ 100 V
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