SIR112DP-T1-RE3
- 型號描述:
- N-Channel 40V 37.6A (Ta), 133A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK? SO-8
MOSFET 40V Vds 20V Vgs PowerPAK SO-8
- 型號:
- SIR112DP-T1-RE3
- 品牌:
- Vishay Semiconductors
- 交期:
- 5-8工作天
- 原廠包裝量:
- 3000
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$45.3863 |
| 10+ | NT$37.1963 |
| 100+ | NT$28.8356 |
| 500+ | NT$24.4335 |
| 1000+ | NT$19.929 |
| 3000+ | NT$18.7346 |
| 6000+ | NT$17.8133 |
| 9000+ | NT$16.9943 |
| 24000+ | NT$16.9601 |
起訂量：1倍增量：1
價格:NT$45.3863數量:
合計:NT$45
- Packaging
- Tape & Reel (TR)
- Part Status
- Active
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 40V
- Current - Continuous Drain (Id) @ 25°C
- 37.6A (Ta), 133A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs
- 1.96mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 89nC @ 10V
- Vgs (Max)
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds
- 4270pF @ 20V
- FET Feature
- -
- Power Dissipation (Max)
- 5W (Ta), 62.5W (Tc)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Supplier Device Package
- PowerPAK® SO-8
- Package / Case
- PowerPAK® SO-8
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