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IPI50R399CPXKSA2
影像僅供參考,以產品規格為準

IPI50R399CPXKSA2

型號描述:
MOSFET LOW POWER_LEGACY
型號:
IPI50R399CPXKSA2
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
1+NT$62.4488
10+NT$52.8938
100+NT$42.315
500+NT$36.855
起訂量:1倍增量:1
價格:NT$62.4488數量:

合計:NT$62

Series
CoolMOS™
Packaging
Tube
Part Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
399mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id
3.5V @ 330µA
Gate Charge (Qg) (Max) @ Vgs
23nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
890pF @ 100V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
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