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IPI65R190CFDXKSA2
影像僅供參考,以產品規格為準

IPI65R190CFDXKSA2

型號描述:
MOSFET HIGH POWER_LEGACY
型號:
IPI65R190CFDXKSA2
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
500
1+¥29.652
10+¥24.864
25+¥23.52
100+¥20.16
250+¥18.984
500+¥17.892
1000+¥16.296
2500+¥15.876
5000+¥15.54
起訂量:1倍增量:1
價格:¥29.652數量:

合計:¥29.65

Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650V
Current - Continuous Drain (Id) @ 25°C
17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id
4.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
68nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1850pF @ 100V
FET Feature
-
Power Dissipation (Max)
151W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
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