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IPI041N12N3GAKSA1
影像僅供參考,以產品規格為準

IPI041N12N3GAKSA1

型號描述:
MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3
型號:
IPI041N12N3GAKSA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
500
1+¥41.748
10+¥35.532
100+¥30.744
250+¥29.148
起訂量:1倍增量:1
價格:¥41.748數量:

合計:¥41.75

Series
OptiMOS™
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs
211nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
13800pF @ 60V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
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