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首頁 > Vishay Siliconix代理商 > SISS22LDN-T1-GE3
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SISS22LDN-T1-GE3

型號描述:
N-Channel 60 V 25.5A (Ta), 92.5A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK? 1212-8S
MOSFET N-CH 60V 25.5A/92.5A PPAK
型號:
SISS22LDN-T1-GE3
品牌:
Vishay Siliconix
交期:
5-8工作天
原廠包裝量:
1+NT$73.477
10+NT$46.97
100+NT$31.732
500+NT$25.203
1000+NT$23.102
起訂量:1 倍增量:1
價格: NT$73.477 數量:

合計: NT$73

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
25.5A (Ta), 92.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2540 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
5W (Ta), 65.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8S
Package / Case
PowerPAK® 1212-8S
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