SIRA00DP-T1-GE3
- 型號描述:
- MOSFET 30V 1mOhm@10V 60A N-Ch G-IV
- 型號:
- SIRA00DP-T1-GE3
- 品牌:
- Vishay Semiconductors
- 交期:
- 5-8工作天
- 原廠包裝量:
- 3000
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$71.6625 |
| 10+ | NT$59.7188 |
| 100+ | NT$47.4338 |
| 250+ | NT$44.0213 |
| 500+ | NT$39.9263 |
| 1000+ | NT$33.9885 |
| 3000+ | NT$32.2481 |
| 6000+ | NT$31.0538 |
| 9000+ | NT$30.3371 |
起訂量：1倍增量：1
價格:NT$71.6625數量:
合計:NT$72
- Packaging
- Tape & Reel (TR)
- Part Status
- Active
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs
- 1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 220nC @ 10V
- Vgs (Max)
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds
- 11700pF @ 15V
- FET Feature
- -
- Power Dissipation (Max)
- 6.25W (Ta), 104W (Tc)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Supplier Device Package
- PowerPAK® SO-8
- Package / Case
- PowerPAK® SO-8
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