SIR4606DP-T1-GE3
- 型號描述:
- MOSFET N-CHANNEL 60-V (D-S) MOSFET
- 型號:
- SIR4606DP-T1-GE3
- 品牌:
- Vishay Semiconductors
- 交期:
- 5-8工作天
- 原廠包裝量:
- 3000
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$41.2913 |
| 10+ | NT$33.7155 |
| 100+ | NT$26.2421 |
| 500+ | NT$22.2495 |
| 1000+ | NT$19.7243 |
| 3000+ | NT$16.7554 |
起訂量：1倍增量：1
價格:NT$41.2913數量:
合計:NT$41
- Packaging
- Tape & Reel (TR)
- Package / Case
- PowerPAK® SO-8
- Mounting Type
- Surface Mount
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- FET Type
- N-Channel
- Current - Continuous Drain (Id) @ 25°C
- 10.5A (Ta), 16A (Tc)
- Rds On (Max) @ Id, Vgs
- 18.5mOhm @ 4A, 10V
- FET Feature
- -
- Power Dissipation (Max)
- 3.7W (Ta), 31.2W (Tc)
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Supplier Device Package
- PowerPAK® SO-8
- Drive Voltage (Max Rds On, Min Rds On)
- 7.5V, 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60 V
- Gate Charge (Qg) (Max) @ Vgs
- 13.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds
- 540 pF @ 30 V
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