我的購物車 0
購物車中還沒有商品,趕快選購吧!
影像僅供參考,以產品規格為準

TW054V65C,LQ

型號描述:
N-Channel 650 V 36A (Tc) 132W (Tc) Surface Mount 4-DFN-EP (8x8)
N-CH SIC MOSFET, 650 V, 0.054 OH
型號:
TW054V65C,LQ
品牌:
Toshiba Semiconductor and Storage
交期:
5-8工作天
原廠包裝量:
1+NT$322.877
10+NT$220.26
100+NT$162.223
500+NT$161.406
起訂量:1 倍增量:1
價格: NT$322.877 數量:

合計: NT$323

FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
81mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
5V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 18 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1362 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
132W (Tc)
Operating Temperature
175°C
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
4-DFN-EP (8x8)
Package / Case
4-VSFN Exposed Pad
  • 資訊中心