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首頁 > Toshiba代理商 > TW015Z120C,S1F
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TW015Z120C,S1F

型號描述:
碳化矽MOSFET G3 1200V SiC-MOSFET TO-247-4L 15mohm
型號:
TW015Z120C,S1F
品牌:
Toshiba
交期:
5-8工作天
原廠包裝量:
30
1+NT$2562.202
10+NT$2052.198
120+NT$2051.84
起訂量:1 倍增量:1
價格: NT$2562.202 數量:

合計: NT$2562

FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
21mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
5V @ 11.7mA
Gate Charge (Qg) (Max) @ Vgs
158 nC @ 18 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
6000 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
431W (Tc)
Operating Temperature
175°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L(X)
Package / Case
TO-247-4
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