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TW031V65C,LQ

型號描述:
N-Channel 650 V 53A (Tc) 156W (Tc) Surface Mount 4-DFN-EP (8x8)
N-CH SIC MOSFET, 650 V, 0.031 OH
型號:
TW031V65C,LQ
品牌:
Toshiba Semiconductor and Storage
交期:
5-8工作天
原廠包裝量:
1+NT$413.098
10+NT$285.51
100+NT$223.034
起訂量:1 倍增量:1
價格: NT$413.098 數量:

合計: NT$413

FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
53A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
45mOhm @ 29A, 18V
Vgs(th) (Max) @ Id
5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 18 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
2288 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
156W (Tc)
Operating Temperature
175°C
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
4-DFN-EP (8x8)
Package / Case
4-VSFN Exposed Pad
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