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R6011ENXC7G

型號描述:
N-Channel 600 V 11A (Ta) 53W (Tc) Through Hole TO-220FM
MOSFET TO220 600V 11A N-CH MOSFET
型號:
R6011ENXC7G
品牌:
ROHM Semiconductor
交期:
5-8工作天
原廠包裝量:
1000
1+NT$111.589
10+NT$65.182
100+NT$61.994
500+NT$59.16
1000+NT$52.783
起訂量:1 倍增量:1
價格: NT$111.589 數量:

合計: NT$112

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
390mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
670 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
53W (Tc)
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220FM
Package / Case
TO-220-3 Full Pack
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