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首頁 > Infineon Technologies代理商 > IPW60R180P7XKSA1
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IPW60R180P7XKSA1

型號描述:
N-Channel 650 V 18A (Tc) 72W (Tc) Through Hole PG-TO247-3
MOSFET N-CH 650V 18A TO247-3
型號:
IPW60R180P7XKSA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
1
1+NT$123.0062
30+NT$67.3477
120+NT$55.0721
510+NT$46.0616
1020+NT$42.7718
2010+NT$42.1564
起訂量:1 倍增量:1
價格: NT$123.0062 數量:

合計: NT$123

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id
4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1081 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
72W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3
Package / Case
TO-247-3
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