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首頁 > Infineon Technologies代理商 > BSZ110N06NS3GATMA1
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BSZ110N06NS3GATMA1

型號描述:
N-Channel 60 V 20A (Tc) 2.1W (Ta), 50W (Tc) Surface Mount PG-TSDSON-8
MOSFET N-CH 60V 20A 8TSDSON
型號:
BSZ110N06NS3GATMA1
品牌:
Infineon Technologies
交期:
5-8工作天
原廠包裝量:
1+NT$42.0021
10+NT$26.4347
100+NT$17.4409
500+NT$13.5733
1000+NT$12.3283
2000+NT$11.3242
起訂量:1 倍增量:1
價格: NT$42.0021 數量:

合計: NT$42

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
11mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
4V @ 23µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2700 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
2.1W (Ta), 50W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
PG-TSDSON-8
Package / Case
8-PowerVDFN
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