FFSP2065BDN-F085
- 型號描述:
-
Diode 650 V 10A Through Hole TO-220-3
碳化矽肖特基二極管 650V 20A SIC SBD GEN.15
- 型號:
- FFSP2065BDN-F085
- 品牌:
- onsemi
- 交期:
- 5-8工作天
- 原廠包裝量:
- 50
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$288.36 |
| 10+ | NT$156.578 |
| 100+ | NT$142.408 |
| 500+ | NT$130.718 |
起訂量：1
倍增量：1
價格:
NT$288.36
數量:
合計: NT$288
- Technology
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)
- 650 V
- Current - Average Rectified (Io)
- 10A
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 10 A
- Speed
- Zero Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)
- 0 ns
- Current - Reverse Leakage @ Vr
- 40 µA @ 650 V
- Capacitance @ Vr, F
- 421pF @ 1V, 100kHz
- Grade
- Automotive
- Qualification
- AEC-Q101
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Supplier Device Package
- TO-220-3
- Operating Temperature - Junction
- -55°C ~ 175°C
- 精選品牌
- 熱銷產品
- PZS51A5V1CS_R1_00001
- LTC7891RUFDM#PBF
- 323161
- M24308/3-2F
- R5F513T3AGNH#20
- LTC6255HS6#TRMPBF
- ADN4624BRNZ
- LT3029EMSE#TRPBF
- 30DRPS4E(D)
- 30DRPS4E
- DF63W-2EP-3.96C
- PJW8N03_R2_00001
- W25Q32JVSSIM
- WIG-16300
- M6-21-427
- 10169891-453001SLF
- AFB0924SH-AF00
- MS27473T12F98PA
- ASL5115SHNZ
- 4922R-08L
- RJFC2ZN
- HCPL-4502-500E
- EEU-FS1A821B
- CRCW1210105RFKEA
- LQM21PN2R2MGSD
- 1SMB3EZ24_R1_00001
- DN01508D
- RC0805FR-0726K7L
- DAR71210
- DAR71210
- DAR71210
- DAR71210
- FDA117GRTR
- MP1653AGTF-Z
- DUA55CM44
- RT6263BHGJ8F
- SD24C-7
- RC0402FR-0736K5P
- 431256083726
- RG2012P-101-B-T5
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