FFSH20120A-F155
- 型號描述:
-
Diode 1200 V 30A Through Hole TO-247-2
碳化矽肖特基二極管 Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20 A, 1200 V, D1, TO-247-2L Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20 A, 1200 V,
- 型號:
- FFSH20120A-F155
- 品牌:
- onsemi
- 交期:
- 5-8工作天
- 原廠包裝量:
- 450
- 幣別 (NTD)稅前單價/PCS
- 點擊查看即時庫存
| 1+ | NT$510.12 |
| 10+ | NT$299.696 |
| 100+ | NT$269.584 |
| 450+ | NT$243.724 |
起訂量：1
倍增量：1
價格:
NT$510.12
數量:
合計: NT$510
- Technology
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)
- 1200 V
- Current - Average Rectified (Io)
- 30A
- Voltage - Forward (Vf) (Max) @ If
- 1.75 V @ 20 A
- Speed
- Zero Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)
- 0 ns
- Current - Reverse Leakage @ Vr
- 200 µA @ 1200 V
- Capacitance @ Vr, F
- 1220pF @ 1V, 100kHz
- Mounting Type
- Through Hole
- Package / Case
- TO-247-2
- Supplier Device Package
- TO-247-2
- Operating Temperature - Junction
- -55°C ~ 175°C
- 精選品牌
- 熱銷產品
- PZS51A5V1CS_R1_00001
- LTC7891RUFDM#PBF
- 323161
- M24308/3-2F
- R5F513T3AGNH#20
- LTC6255HS6#TRMPBF
- ADN4624BRNZ
- LT3029EMSE#TRPBF
- 30DRPS4E(D)
- 30DRPS4E
- DF63W-2EP-3.96C
- PJW8N03_R2_00001
- W25Q32JVSSIM
- WIG-16300
- M6-21-427
- 10169891-453001SLF
- AFB0924SH-AF00
- MS27473T12F98PA
- ASL5115SHNZ
- 4922R-08L
- RJFC2ZN
- HCPL-4502-500E
- EEU-FS1A821B
- CRCW1210105RFKEA
- LQM21PN2R2MGSD
- 1SMB3EZ24_R1_00001
- DN01508D
- RC0805FR-0726K7L
- DAR71210
- DAR71210
- DAR71210
- DAR71210
- FDA117GRTR
- MP1653AGTF-Z
- DUA55CM44
- RT6263BHGJ8F
- SD24C-7
- RC0402FR-0736K5P
- 431256083726
- RG2012P-101-B-T5
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