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SQJ414EP-T1_GE3
影像僅供參考,以產品規格為準

SQJ414EP-T1_GE3

型號描述:
MOSFET Dual N-Ch 30V AEC-Q101 Qualified
型號:
SQJ414EP-T1_GE3
品牌:
Vishay Semiconductors
交期:
5-8工作天
原廠包裝量:
3000
1+NT$31.0538
10+NT$26.8564
100+NT$18.5981
500+NT$15.5269
1000+NT$13.2405
3000+NT$11.739
6000+NT$11.0906
9000+NT$10.3058
24000+NT$10.2034
起訂量:1倍增量:1
價格:NT$31.0538數量:

合計:NT$31

Base Part Number
SQJ414
Package / Case
PowerPAK® SO-8
Supplier Device Package
PowerPAK® SO-8
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
45W (Tc)
FET Feature
-
Input Capacitance (Ciss) (Max) @ Vds
1110pF @ 15V
Vgs (Max)
±20V
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Rds On (Max) @ Id, Vgs
12mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drain to Source Voltage (Vdss)
30V
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Part Status
Active
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, TrenchFET®
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