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SQJ414EP-T1_GE3
影像僅供參考,以產品規格為準

SQJ414EP-T1_GE3

型號描述:
MOSFET Dual N-Ch 30V AEC-Q101 Qualified
型號:
SQJ414EP-T1_GE3
品牌:
Vishay Semiconductors
交期:
5-8工作天
原廠包裝量:
3000
1+¥7.644
10+¥6.6108
100+¥4.578
500+¥3.822
1000+¥3.2592
3000+¥2.8896
6000+¥2.73
9000+¥2.5368
24000+¥2.5116
起訂量:1倍增量:1
價格:¥7.644數量:

合計:¥7.64

Series
Automotive, AEC-Q101, TrenchFET®
Packaging
Tape & Reel (TR)
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
12mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1110pF @ 15V
FET Feature
-
Power Dissipation (Max)
45W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Part Number
SQJ414
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