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首頁 > Vishay Siliconix代理商 > SISS50DN-T1-GE3
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SISS50DN-T1-GE3

型號描述:
N-Channel 45 V 29.7A (Ta), 108A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK? 1212-8S
MOSFET N-CH 45V 29.7A/108A PPAK
型號:
SISS50DN-T1-GE3
品牌:
Vishay Siliconix
交期:
5-8工作天
原廠包裝量:
3000+NT$12.3936
6000+NT$11.4978
9000+NT$11.0411
15000+NT$10.8928
起訂量:3000 倍增量:1
價格: NT$12.3936 數量:

合計: NT$37181

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
45 V
Current - Continuous Drain (Id) @ 25°C
29.7A (Ta), 108A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.83mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
4000 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
5W (Ta), 65.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8S
Package / Case
PowerPAK® 1212-8S
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