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首頁 > Vishay Siliconix代理商 > SIS888DN-T1-GE3
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SIS888DN-T1-GE3

型號描述:
N-Channel 150 V 20.2A (Tc) 52W (Tc) Surface Mount PowerPAK? 1212-8S
MOSFET N-CH 150V 20.2A PPAK
型號:
SIS888DN-T1-GE3
品牌:
Vishay Siliconix
交期:
5-8工作天
原廠包裝量:
1+NT$74.8503
10+NT$47.863
100+NT$32.4912
500+NT$25.9023
1000+NT$24.8215
起訂量:1 倍增量:1
價格: NT$74.8503 數量:

合計: NT$75

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
58mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
420 pF @ 75 V
FET Feature
-
Power Dissipation (Max)
52W (Tc)
Operating Temperature
-55°C ~ 150°C (TA)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8S
Package / Case
PowerPAK® 1212-8S
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