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首頁 > Vishay Siliconix代理商 > SIRA01DP-T1-GE3
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SIRA01DP-T1-GE3

型號描述:
P-Channel 30 V 26A (Ta), 60A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK? SO-8
MOSFET P-CH 30V 26A/60A PPAK SO8
型號:
SIRA01DP-T1-GE3
品牌:
Vishay Siliconix
交期:
5-8工作天
原廠包裝量:
1+NT$84.464
10+NT$54.181
100+NT$36.886
500+NT$29.477
1000+NT$27.096
起訂量:1 倍增量:1
價格: NT$84.464 數量:

合計: NT$84

FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
26A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
112 nC @ 10 V
Vgs (Max)
+16V, -20V
Input Capacitance (Ciss) (Max) @ Vds
3490 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
5W (Ta), 62.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
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