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首頁 > Vishay Siliconix代理商 > SIHG055N65E-GE3
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SIHG055N65E-GE3

型號描述:
N-Channel 650 V 47A (Tc) 312W (Tc) Through Hole TO-247AC
N-CHANNEL 650V
型號:
SIHG055N65E-GE3
品牌:
Vishay Siliconix
交期:
5-8工作天
原廠包裝量:
500+NT$134.231
1000+NT$130.867
1500+NT$129.183
2500+NT$127.317
起訂量:500 倍增量:1
價格: NT$134.231 數量:

合計: NT$67116

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
58mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
108 nC @ 20 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3769 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
312W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247AC
Package / Case
TO-247-3
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